Doping-dependent fixed charges in SiC/SiO2 structure
Doping-dependent fixed charges were found in SiC/SiO _2 structures through a study on threshold voltage in both n- and p-channel SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) with various body doping concentrations. Positive fixed charges increase for the p-body (n-channel) device...
Saved in:
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IOP Publishing
2025-01-01
|
| Series: | Applied Physics Express |
| Subjects: | |
| Online Access: | https://doi.org/10.35848/1882-0786/adb539 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1850034080852213760 |
|---|---|
| author | Kyota Mikami Mitsuaki Kaneko Tsunenobu Kimoto |
| author_facet | Kyota Mikami Mitsuaki Kaneko Tsunenobu Kimoto |
| author_sort | Kyota Mikami |
| collection | DOAJ |
| description | Doping-dependent fixed charges were found in SiC/SiO _2 structures through a study on threshold voltage in both n- and p-channel SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) with various body doping concentrations. Positive fixed charges increase for the p-body (n-channel) devices and negative fixed charges increase for the n-body (p-channel) devices, both of which retard the increase of threshold voltage in MOSFETs with increasing the body doping. |
| format | Article |
| id | doaj-art-05f193447dca4e97810c849bc5a06780 |
| institution | DOAJ |
| issn | 1882-0786 |
| language | English |
| publishDate | 2025-01-01 |
| publisher | IOP Publishing |
| record_format | Article |
| series | Applied Physics Express |
| spelling | doaj-art-05f193447dca4e97810c849bc5a067802025-08-20T02:57:57ZengIOP PublishingApplied Physics Express1882-07862025-01-0118303400210.35848/1882-0786/adb539Doping-dependent fixed charges in SiC/SiO2 structureKyota Mikami0https://orcid.org/0000-0002-1922-6064Mitsuaki Kaneko1https://orcid.org/0000-0001-5629-0105Tsunenobu Kimoto2https://orcid.org/0000-0002-6649-2090Department of Electronic Science and Engineering, Kyoto University , Nishikyo, Kyoto 615-8510, JapanDepartment of Electronic Science and Engineering, Kyoto University , Nishikyo, Kyoto 615-8510, JapanDepartment of Electronic Science and Engineering, Kyoto University , Nishikyo, Kyoto 615-8510, JapanDoping-dependent fixed charges were found in SiC/SiO _2 structures through a study on threshold voltage in both n- and p-channel SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) with various body doping concentrations. Positive fixed charges increase for the p-body (n-channel) devices and negative fixed charges increase for the n-body (p-channel) devices, both of which retard the increase of threshold voltage in MOSFETs with increasing the body doping.https://doi.org/10.35848/1882-0786/adb539silicon carbideMOSFETsthreshold voltagefixed charges |
| spellingShingle | Kyota Mikami Mitsuaki Kaneko Tsunenobu Kimoto Doping-dependent fixed charges in SiC/SiO2 structure Applied Physics Express silicon carbide MOSFETs threshold voltage fixed charges |
| title | Doping-dependent fixed charges in SiC/SiO2 structure |
| title_full | Doping-dependent fixed charges in SiC/SiO2 structure |
| title_fullStr | Doping-dependent fixed charges in SiC/SiO2 structure |
| title_full_unstemmed | Doping-dependent fixed charges in SiC/SiO2 structure |
| title_short | Doping-dependent fixed charges in SiC/SiO2 structure |
| title_sort | doping dependent fixed charges in sic sio2 structure |
| topic | silicon carbide MOSFETs threshold voltage fixed charges |
| url | https://doi.org/10.35848/1882-0786/adb539 |
| work_keys_str_mv | AT kyotamikami dopingdependentfixedchargesinsicsio2structure AT mitsuakikaneko dopingdependentfixedchargesinsicsio2structure AT tsunenobukimoto dopingdependentfixedchargesinsicsio2structure |