Machine Learning-Enabled Fast Prediction of GGNMOS Performance and Inverse Design for Electrostatic Discharge Applications
Electrostatic discharge (ESD) protection is generally required in integrated circuit (IC) chips. The grounded-gate n-channel metal-oxide-semiconductor (GGNMOS) is a popular device for ESD protection in circuit design. However, the design optimization of GGNMOS for every circuit is carried out using...
Saved in:
| Main Authors: | , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2025-01-01
|
| Series: | IEEE Access |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/11115110/ |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Be the first to leave a comment!