Enhanced Performance of Perovskite Light-Emitting Devices With Improved Perovskite Crystallization
In this paper, we have demonstrated an efficient perovskite light-emitting device (PeLED) by improving perovskite crystallization. The improved perovskite crystallization has been achieved by pretreating the underneath poly (3, 4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT: PSS) layer wit...
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| Format: | Article |
| Language: | English |
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IEEE
2017-01-01
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| Series: | IEEE Photonics Journal |
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| Online Access: | https://ieeexplore.ieee.org/document/7805140/ |
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| author | Yue-Feng Liu Yi-Fan Zhang Ming Xu Zhen-Yu Zhang Jifang Tao Yuandong Gu Jing Feng Hong-Bo Sun |
| author_facet | Yue-Feng Liu Yi-Fan Zhang Ming Xu Zhen-Yu Zhang Jifang Tao Yuandong Gu Jing Feng Hong-Bo Sun |
| author_sort | Yue-Feng Liu |
| collection | DOAJ |
| description | In this paper, we have demonstrated an efficient perovskite light-emitting device (PeLED) by improving perovskite crystallization. The improved perovskite crystallization has been achieved by pretreating the underneath poly (3, 4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT: PSS) layer with N, N-dimethylformamide (DMF) solvent before single-step spin-coating the perovskite, which results in a prolonged wet environment during the perovskite thermal annealing process to promote the grain growth. The improved perovskite crystallization induces a perovskite thin film with higher surface coverage, fewer defects, and larger grain size with less scattering of grain boundaries. As a result, the PeLEDs exhibit maximum external quantum efficiency of 0.728% and maximum luminance of 2088 cd/m<sup>2</sup>, which represent a significant improvement over the control devices. Moreover, perovskite films with improved crystalline quality have proved its beneficial effect on the device stability. |
| format | Article |
| id | doaj-art-05cef597a63c43098eee602eb0f27c8d |
| institution | Kabale University |
| issn | 1943-0655 |
| language | English |
| publishDate | 2017-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Photonics Journal |
| spelling | doaj-art-05cef597a63c43098eee602eb0f27c8d2025-08-20T03:31:23ZengIEEEIEEE Photonics Journal1943-06552017-01-01911810.1109/JPHOT.2016.26472047805140Enhanced Performance of Perovskite Light-Emitting Devices With Improved Perovskite CrystallizationYue-Feng Liu0Yi-Fan Zhang1Ming Xu2Zhen-Yu Zhang3Jifang Tao4Yuandong Gu5Jing Feng6Hong-Bo Sun7State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, ChinaState Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, ChinaState Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, ChinaState Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, ChinaAgency of Science Technology and Research, SingaporeAgency of Science Technology and Research, SingaporeState Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, ChinaState Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, ChinaIn this paper, we have demonstrated an efficient perovskite light-emitting device (PeLED) by improving perovskite crystallization. The improved perovskite crystallization has been achieved by pretreating the underneath poly (3, 4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT: PSS) layer with N, N-dimethylformamide (DMF) solvent before single-step spin-coating the perovskite, which results in a prolonged wet environment during the perovskite thermal annealing process to promote the grain growth. The improved perovskite crystallization induces a perovskite thin film with higher surface coverage, fewer defects, and larger grain size with less scattering of grain boundaries. As a result, the PeLEDs exhibit maximum external quantum efficiency of 0.728% and maximum luminance of 2088 cd/m<sup>2</sup>, which represent a significant improvement over the control devices. Moreover, perovskite films with improved crystalline quality have proved its beneficial effect on the device stability.https://ieeexplore.ieee.org/document/7805140/Light-emitting diodes (LEDs)optoelectronic materialssources. |
| spellingShingle | Yue-Feng Liu Yi-Fan Zhang Ming Xu Zhen-Yu Zhang Jifang Tao Yuandong Gu Jing Feng Hong-Bo Sun Enhanced Performance of Perovskite Light-Emitting Devices With Improved Perovskite Crystallization IEEE Photonics Journal Light-emitting diodes (LEDs) optoelectronic materials sources. |
| title | Enhanced Performance of Perovskite Light-Emitting Devices With Improved Perovskite Crystallization |
| title_full | Enhanced Performance of Perovskite Light-Emitting Devices With Improved Perovskite Crystallization |
| title_fullStr | Enhanced Performance of Perovskite Light-Emitting Devices With Improved Perovskite Crystallization |
| title_full_unstemmed | Enhanced Performance of Perovskite Light-Emitting Devices With Improved Perovskite Crystallization |
| title_short | Enhanced Performance of Perovskite Light-Emitting Devices With Improved Perovskite Crystallization |
| title_sort | enhanced performance of perovskite light emitting devices with improved perovskite crystallization |
| topic | Light-emitting diodes (LEDs) optoelectronic materials sources. |
| url | https://ieeexplore.ieee.org/document/7805140/ |
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