Properties of κ‐Ga2O3 Prepared by Epitaxial Lateral Overgrowth

Properties of κ‐Ga2O3 Prepared by Epitaxial Lateral Overgrowth

Abstract The structural and electrical properties of undoped and Sn doped κ‐Ga2O3 layers grown by epitaxial lateral overgrowth on TiO2/sapphire substrates using stripe and point masks show that the crystalline structure of the films can be greatly improved relative to conventional planar growth. The...

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Bibliographic Details
Main Authors: Alexander Polyakov, In‐Hwan Lee, Vladimir Nikolaev, Aleksei Pechnikov, Andrew Miakonkikh, Mikhail Scheglov, Eugene Yakimov, Andrei Chikiryaka, Anton Vasilev, Anastasia Kochkova, Ivan Shchemerov, Alexey Chernykh, Stephen Pearton
Format: Article
Language:English
Published: Wiley-VCH 2025-01-01
Series:Advanced Materials Interfaces
Subjects:
epitaxial lateral overgrowth
Ga2O3
hydrogen plasma treatment
metastable polymorphs
wide‐bandgap semiconductors
Online Access:https://doi.org/10.1002/admi.202300394
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