Ternary amorphous oxide semiconductor of In–Ga–O system for three-dimensional integrated device application
In2O3-based oxide semiconductors are potential materials for supporting the development of next-generation integrated devices with low power consumption, such as back-end-of-line-compatible transistors and ferroelectric memories. Currently, these are standard semiconductor materials used in display...
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| Format: | Article |
| Language: | English |
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AIP Publishing LLC
2025-05-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0243670 |
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| author | Takanori Takahashi Mutsunori Uenuma Masaharu Kobayashi Yukiharu Uraoka |
| author_facet | Takanori Takahashi Mutsunori Uenuma Masaharu Kobayashi Yukiharu Uraoka |
| author_sort | Takanori Takahashi |
| collection | DOAJ |
| description | In2O3-based oxide semiconductors are potential materials for supporting the development of next-generation integrated devices with low power consumption, such as back-end-of-line-compatible transistors and ferroelectric memories. Currently, these are standard semiconductor materials used in display research and industrial fields; however, their physical properties and functions must be optimized and reviewed to accelerate integrated device applications. This study proposed a concept for developing thermally stable amorphous oxide semiconductor materials for three-dimensional ferroelectric memory applications. We focused on ternary amorphous oxide semiconductors in terms of the atomic layer deposition process, thermal stability of the amorphous phase, and electrical properties. The electrical properties of ternary In–X–O (X = Al, Ga, Zn, or Sn) in a thin-film transistor fabricated using a high-temperature process were evaluated and compared. A ternary In–Ga–O system satisfied the stability of mobility over 20 cm2/Vs and threshold voltage close to 0 V under high temperature annealing up to 600 °C, which implies compatibility with HfO2-based ferroelectric device applications. The designed amorphous In–Ga–O induced a ferroelectric phase of Zr-doped HfO2 and exhibited sufficient semiconducting properties even after annealing at 500 °C in an N2 atmosphere. In addition, we developed an atomic layer deposition process for fabricating In–Ga–O. The atomic-layer-deposited In–Ga–O channel exhibited thermal stability, field-effect mobility over 20 cm2/Vs, and a subthreshold swing below 80 mV/decade, which was nearly identical to that of the sputter-deposited channel. The ternary In–Ga–O can be considered a potential material for future memory applications. This study provides a unique perspective on the design of oxide semiconductor materials for integrated devices. |
| format | Article |
| id | doaj-art-05ab5e61da134392a752691a07c45251 |
| institution | Kabale University |
| issn | 2166-532X |
| language | English |
| publishDate | 2025-05-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | APL Materials |
| spelling | doaj-art-05ab5e61da134392a752691a07c452512025-08-20T03:37:02ZengAIP Publishing LLCAPL Materials2166-532X2025-05-01135051101051101-1510.1063/5.0243670Ternary amorphous oxide semiconductor of In–Ga–O system for three-dimensional integrated device applicationTakanori Takahashi0Mutsunori Uenuma1Masaharu Kobayashi2Yukiharu Uraoka3Graduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama-cho, Ikoma, Nara 630-0192, JapanNational Advanced Industrial Science and Technology, 807-1 Shuku-machi, Tosu, Saga 841-0052, JapanInstitute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, JapanGraduate School of Materials Science, Nara Institute of Science and Technology, 8916-5 Takayama-cho, Ikoma, Nara 630-0192, JapanIn2O3-based oxide semiconductors are potential materials for supporting the development of next-generation integrated devices with low power consumption, such as back-end-of-line-compatible transistors and ferroelectric memories. Currently, these are standard semiconductor materials used in display research and industrial fields; however, their physical properties and functions must be optimized and reviewed to accelerate integrated device applications. This study proposed a concept for developing thermally stable amorphous oxide semiconductor materials for three-dimensional ferroelectric memory applications. We focused on ternary amorphous oxide semiconductors in terms of the atomic layer deposition process, thermal stability of the amorphous phase, and electrical properties. The electrical properties of ternary In–X–O (X = Al, Ga, Zn, or Sn) in a thin-film transistor fabricated using a high-temperature process were evaluated and compared. A ternary In–Ga–O system satisfied the stability of mobility over 20 cm2/Vs and threshold voltage close to 0 V under high temperature annealing up to 600 °C, which implies compatibility with HfO2-based ferroelectric device applications. The designed amorphous In–Ga–O induced a ferroelectric phase of Zr-doped HfO2 and exhibited sufficient semiconducting properties even after annealing at 500 °C in an N2 atmosphere. In addition, we developed an atomic layer deposition process for fabricating In–Ga–O. The atomic-layer-deposited In–Ga–O channel exhibited thermal stability, field-effect mobility over 20 cm2/Vs, and a subthreshold swing below 80 mV/decade, which was nearly identical to that of the sputter-deposited channel. The ternary In–Ga–O can be considered a potential material for future memory applications. This study provides a unique perspective on the design of oxide semiconductor materials for integrated devices.http://dx.doi.org/10.1063/5.0243670 |
| spellingShingle | Takanori Takahashi Mutsunori Uenuma Masaharu Kobayashi Yukiharu Uraoka Ternary amorphous oxide semiconductor of In–Ga–O system for three-dimensional integrated device application APL Materials |
| title | Ternary amorphous oxide semiconductor of In–Ga–O system for three-dimensional integrated device application |
| title_full | Ternary amorphous oxide semiconductor of In–Ga–O system for three-dimensional integrated device application |
| title_fullStr | Ternary amorphous oxide semiconductor of In–Ga–O system for three-dimensional integrated device application |
| title_full_unstemmed | Ternary amorphous oxide semiconductor of In–Ga–O system for three-dimensional integrated device application |
| title_short | Ternary amorphous oxide semiconductor of In–Ga–O system for three-dimensional integrated device application |
| title_sort | ternary amorphous oxide semiconductor of in ga o system for three dimensional integrated device application |
| url | http://dx.doi.org/10.1063/5.0243670 |
| work_keys_str_mv | AT takanoritakahashi ternaryamorphousoxidesemiconductorofingaosystemforthreedimensionalintegrateddeviceapplication AT mutsunoriuenuma ternaryamorphousoxidesemiconductorofingaosystemforthreedimensionalintegrateddeviceapplication AT masaharukobayashi ternaryamorphousoxidesemiconductorofingaosystemforthreedimensionalintegrateddeviceapplication AT yukiharuuraoka ternaryamorphousoxidesemiconductorofingaosystemforthreedimensionalintegrateddeviceapplication |