Organic bistable memory devices utilizing PMMA polymer matrix-based ZnOC60 core-shell QDs nanocomposites
This study explores the development of organic bistable memory devices (OBMDs) leveraging ZnO-fullerene (C60) core-shell QDs embedded within a poly(methyl methacrylate) (PMMA) polymer matrix. Employing a spin-coating methodology, ZnO QDs were encapsulated with fullerene C60, a molecule renowned for...
Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-08-01
|
| Series: | Carbon Trends |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2667056925000677 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1850039955798097920 |
|---|---|
| author | Jaeho Shim Jinseo Park Seok-Ho Seo Ju Hee You Dong Ick Son |
| author_facet | Jaeho Shim Jinseo Park Seok-Ho Seo Ju Hee You Dong Ick Son |
| author_sort | Jaeho Shim |
| collection | DOAJ |
| description | This study explores the development of organic bistable memory devices (OBMDs) leveraging ZnO-fullerene (C60) core-shell QDs embedded within a poly(methyl methacrylate) (PMMA) polymer matrix. Employing a spin-coating methodology, ZnO QDs were encapsulated with fullerene C60, a molecule renowned for its high electron affinity, to establish a robust core-shell configuration. This design significantly enhanced quantum confinement and provided efficient charge trapping capabilities. Structural analyses using transmission electron microscopy (TEM) confirmed the uniform dispersion and precise formation of ZnOC60 QDs, exhibiting an average particle size of approximately 10 nm within the polymer matrix. The electrical performance of Al/ZnOC60 QD-embedded PMMA/ITO devices was evaluated at 300 K, revealing clear bistable characteristics. The devices achieved a high ON/OFF current ratio of 7.46 × 103, demonstrated exceptional cycling endurance exceeding 1.5 × 104 cycles, and exhibited long-term retention surpassing 1.2 × 105 s. Detailed analysis of current-voltage (I-V) data highlighted Fowler-Nordheim (F-N) tunneling as a key mechanism facilitating efficient memory operation. These findings underscore the potential of ZnOC60 core-shell QDs as a transformative material system for advanced non-volatile memory technologies. This work provides a foundation for further exploration into scalable and energy-efficient memory devices suitable for next-generation electronics and optoelectronics. |
| format | Article |
| id | doaj-art-0502e447c0f446b4ad5545d35dbdf660 |
| institution | DOAJ |
| issn | 2667-0569 |
| language | English |
| publishDate | 2025-08-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Carbon Trends |
| spelling | doaj-art-0502e447c0f446b4ad5545d35dbdf6602025-08-20T02:56:12ZengElsevierCarbon Trends2667-05692025-08-012010051710.1016/j.cartre.2025.100517Organic bistable memory devices utilizing PMMA polymer matrix-based ZnOC60 core-shell QDs nanocompositesJaeho Shim0Jinseo Park1Seok-Ho Seo2Ju Hee You3Dong Ick Son4Institute of Advanced Composite Materials, Korea Institute of Science and Technology, 92 Chudong-ro, Bongdong-eup, Wanju-gun, Jeollabuk-do 55324, Republic of Korea; Corresponding authors.Institute of Advanced Composite Materials, Korea Institute of Science and Technology, 92 Chudong-ro, Bongdong-eup, Wanju-gun, Jeollabuk-do 55324, Republic of KoreaInstitute of Advanced Composite Materials, Korea Institute of Science and Technology, 92 Chudong-ro, Bongdong-eup, Wanju-gun, Jeollabuk-do 55324, Republic of KoreaInstitute of Advanced Composite Materials, Korea Institute of Science and Technology, 92 Chudong-ro, Bongdong-eup, Wanju-gun, Jeollabuk-do 55324, Republic of KoreaInstitute of Advanced Composite Materials, Korea Institute of Science and Technology, 92 Chudong-ro, Bongdong-eup, Wanju-gun, Jeollabuk-do 55324, Republic of Korea; Department of JBNU-KIST Industry-Academia Convergence Research, Jeonbuk National University, Jeonbuk 54895, Republic of Korea; Division of Nanoscience & Technology, KIST School, Korea National University of Science and Technology (UST), Daejeon 305-350, Republic of Korea; Corresponding authors.This study explores the development of organic bistable memory devices (OBMDs) leveraging ZnO-fullerene (C60) core-shell QDs embedded within a poly(methyl methacrylate) (PMMA) polymer matrix. Employing a spin-coating methodology, ZnO QDs were encapsulated with fullerene C60, a molecule renowned for its high electron affinity, to establish a robust core-shell configuration. This design significantly enhanced quantum confinement and provided efficient charge trapping capabilities. Structural analyses using transmission electron microscopy (TEM) confirmed the uniform dispersion and precise formation of ZnOC60 QDs, exhibiting an average particle size of approximately 10 nm within the polymer matrix. The electrical performance of Al/ZnOC60 QD-embedded PMMA/ITO devices was evaluated at 300 K, revealing clear bistable characteristics. The devices achieved a high ON/OFF current ratio of 7.46 × 103, demonstrated exceptional cycling endurance exceeding 1.5 × 104 cycles, and exhibited long-term retention surpassing 1.2 × 105 s. Detailed analysis of current-voltage (I-V) data highlighted Fowler-Nordheim (F-N) tunneling as a key mechanism facilitating efficient memory operation. These findings underscore the potential of ZnOC60 core-shell QDs as a transformative material system for advanced non-volatile memory technologies. This work provides a foundation for further exploration into scalable and energy-efficient memory devices suitable for next-generation electronics and optoelectronics.http://www.sciencedirect.com/science/article/pii/S2667056925000677ZnO-C60Quantum DotPolymerNanocompositesOrganic bistable memory devices |
| spellingShingle | Jaeho Shim Jinseo Park Seok-Ho Seo Ju Hee You Dong Ick Son Organic bistable memory devices utilizing PMMA polymer matrix-based ZnOC60 core-shell QDs nanocomposites Carbon Trends ZnO-C60 Quantum Dot Polymer Nanocomposites Organic bistable memory devices |
| title | Organic bistable memory devices utilizing PMMA polymer matrix-based ZnOC60 core-shell QDs nanocomposites |
| title_full | Organic bistable memory devices utilizing PMMA polymer matrix-based ZnOC60 core-shell QDs nanocomposites |
| title_fullStr | Organic bistable memory devices utilizing PMMA polymer matrix-based ZnOC60 core-shell QDs nanocomposites |
| title_full_unstemmed | Organic bistable memory devices utilizing PMMA polymer matrix-based ZnOC60 core-shell QDs nanocomposites |
| title_short | Organic bistable memory devices utilizing PMMA polymer matrix-based ZnOC60 core-shell QDs nanocomposites |
| title_sort | organic bistable memory devices utilizing pmma polymer matrix based znoc60 core shell qds nanocomposites |
| topic | ZnO-C60 Quantum Dot Polymer Nanocomposites Organic bistable memory devices |
| url | http://www.sciencedirect.com/science/article/pii/S2667056925000677 |
| work_keys_str_mv | AT jaehoshim organicbistablememorydevicesutilizingpmmapolymermatrixbasedznoc60coreshellqdsnanocomposites AT jinseopark organicbistablememorydevicesutilizingpmmapolymermatrixbasedznoc60coreshellqdsnanocomposites AT seokhoseo organicbistablememorydevicesutilizingpmmapolymermatrixbasedznoc60coreshellqdsnanocomposites AT juheeyou organicbistablememorydevicesutilizingpmmapolymermatrixbasedznoc60coreshellqdsnanocomposites AT dongickson organicbistablememorydevicesutilizingpmmapolymermatrixbasedznoc60coreshellqdsnanocomposites |