Atomistic Simulation of Intrinsic Defects and Trivalent and Tetravalent Ion Doping in Hydroxyapatite

Atomistic simulation techniques have been employed in order to investigate key issues related to intrinsic defects and a variety of dopants from trivalent and tetravalent ions. The most favorable intrinsic defect is determined to be a scheme involving calcium and hydroxyl vacancies. It is found that...

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Bibliographic Details
Main Authors: Ricardo D. S. Santos, Marcos V. dos S. Rezende
Format: Article
Language:English
Published: Wiley 2014-01-01
Series:Advances in Condensed Matter Physics
Online Access:http://dx.doi.org/10.1155/2014/609024
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