First-Principle Calculations of Interfacial Resistance between Nickel Silicide and Hyperdoped Silicon with N-Type Dopants Arsenic, Phosphorus, Antimony, Selenium and Tellurium
The interfacial resistance between NiSi2 and n-type doped Si was investigated using density functional theory calculations with hybrid functionals. We explored the resistance of Si at different doping concentrations by assigning an effective potential to each Si atom. Then, the valley filtering effe...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2024-12-01
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| Series: | Applied Surface Science Advances |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2666523924000746 |
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