Influence of Shape Anisotropy on Magnetization Dynamics Driven by Spin Hall Effect

As the lateral dimension of spin Hall effect based magnetic random-access memory (SHE-RAM) devices is scaled down, shape anisotropy has varied influence on both the magnetic field and the current-driven switching characteristics. In this paper, we study such influences on elliptic film nanomagnets a...

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Main Authors: X. G. Li, Z. J. Liu, X. Y. Xie, A. G. Kang, W. N. Fu
Format: Article
Language:English
Published: Wiley 2016-01-01
Series:Advances in Materials Science and Engineering
Online Access:http://dx.doi.org/10.1155/2016/4259846
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author X. G. Li
Z. J. Liu
X. Y. Xie
A. G. Kang
W. N. Fu
author_facet X. G. Li
Z. J. Liu
X. Y. Xie
A. G. Kang
W. N. Fu
author_sort X. G. Li
collection DOAJ
description As the lateral dimension of spin Hall effect based magnetic random-access memory (SHE-RAM) devices is scaled down, shape anisotropy has varied influence on both the magnetic field and the current-driven switching characteristics. In this paper, we study such influences on elliptic film nanomagnets and theoretically investigate the switching characteristics for SHE-RAM element with in-plane magnetization. The analytical expressions for critical current density are presented and the results are compared with those obtained from macrospin and micromagnetic simulation. It is found that the key performance indicators for in-plane SHE-RAM, including thermal stability and spin torque efficiency, are highly geometry dependent and can be effectively improved by geometric design.
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institution Kabale University
issn 1687-8434
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language English
publishDate 2016-01-01
publisher Wiley
record_format Article
series Advances in Materials Science and Engineering
spelling doaj-art-03e9d6cd03a4443cac46ddedf4f5ad852025-08-20T03:55:32ZengWileyAdvances in Materials Science and Engineering1687-84341687-84422016-01-01201610.1155/2016/42598464259846Influence of Shape Anisotropy on Magnetization Dynamics Driven by Spin Hall EffectX. G. Li0Z. J. Liu1X. Y. Xie2A. G. Kang3W. N. Fu4College of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan, ChinaCollege of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan, ChinaCollege of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan, ChinaCollege of Physics and Optoelectronics, Taiyuan University of Technology, Taiyuan, ChinaDepartment of Electrical Engineering, The Hong Kong Polytechnic University, Kowloon, Hong KongAs the lateral dimension of spin Hall effect based magnetic random-access memory (SHE-RAM) devices is scaled down, shape anisotropy has varied influence on both the magnetic field and the current-driven switching characteristics. In this paper, we study such influences on elliptic film nanomagnets and theoretically investigate the switching characteristics for SHE-RAM element with in-plane magnetization. The analytical expressions for critical current density are presented and the results are compared with those obtained from macrospin and micromagnetic simulation. It is found that the key performance indicators for in-plane SHE-RAM, including thermal stability and spin torque efficiency, are highly geometry dependent and can be effectively improved by geometric design.http://dx.doi.org/10.1155/2016/4259846
spellingShingle X. G. Li
Z. J. Liu
X. Y. Xie
A. G. Kang
W. N. Fu
Influence of Shape Anisotropy on Magnetization Dynamics Driven by Spin Hall Effect
Advances in Materials Science and Engineering
title Influence of Shape Anisotropy on Magnetization Dynamics Driven by Spin Hall Effect
title_full Influence of Shape Anisotropy on Magnetization Dynamics Driven by Spin Hall Effect
title_fullStr Influence of Shape Anisotropy on Magnetization Dynamics Driven by Spin Hall Effect
title_full_unstemmed Influence of Shape Anisotropy on Magnetization Dynamics Driven by Spin Hall Effect
title_short Influence of Shape Anisotropy on Magnetization Dynamics Driven by Spin Hall Effect
title_sort influence of shape anisotropy on magnetization dynamics driven by spin hall effect
url http://dx.doi.org/10.1155/2016/4259846
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