Layer-by-Layer Engineered Zinc–Tin Oxide/Single-Walled Carbon Nanotube (ZTO/SWNT) Hybrid Films for Thin-Film Transistor Applications

Indium-based oxide semiconductors have been commercialized because of their excellent electrical properties, but the high cost, limited availability, and environmental toxicity of indium necessitate the development of alternative materials. Among the most promising candidates, zinc–tin oxide (ZTO) i...

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Main Authors: Yong-Jae Kim, Young-Jik Lee, Yeon-Hee Kim, Byung Seong Bae, Woon-Seop Choi
Format: Article
Language:English
Published: MDPI AG 2025-07-01
Series:Micromachines
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Online Access:https://www.mdpi.com/2072-666X/16/7/825
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_version_ 1849407022798209024
author Yong-Jae Kim
Young-Jik Lee
Yeon-Hee Kim
Byung Seong Bae
Woon-Seop Choi
author_facet Yong-Jae Kim
Young-Jik Lee
Yeon-Hee Kim
Byung Seong Bae
Woon-Seop Choi
author_sort Yong-Jae Kim
collection DOAJ
description Indium-based oxide semiconductors have been commercialized because of their excellent electrical properties, but the high cost, limited availability, and environmental toxicity of indium necessitate the development of alternative materials. Among the most promising candidates, zinc–tin oxide (ZTO) is an indium-free oxide semiconductor with considerable potential, but its relatively low carrier mobility and inherent limitations in thin-film quality demand further performance enhancements. This paper proposes a new approach to overcome these challenges by incorporating single-walled carbon nanotubes (SWNTs) as conductive fillers into the ZTO matrix and using a layer-by-layer multiple coating process to construct nanocomposite thin films. As a result, ZTO/SWNTs (0.07 wt.%) thin-film transistors (TFTs) fabricated with three coating cycles exhibited a high saturation mobility of 18.72 cm<sup>2</sup>/V·s, a threshold voltage of 0.84 V, and a subthreshold swing of 0.51 V/dec. These values represent an approximately four-fold improvement in mobility compared to ZTO TFT, showing that the multiple-coating-based nanocomposite strategy can effectively overcome the fundamental limitations. This study confirms the feasibility of achieving high-performance oxide semiconductor transistors without indium, providing a sustainable pathway for next-generation flexible electronics and display technologies.
format Article
id doaj-art-03b567881f494b76b7c24bd2e8ce2613
institution Kabale University
issn 2072-666X
language English
publishDate 2025-07-01
publisher MDPI AG
record_format Article
series Micromachines
spelling doaj-art-03b567881f494b76b7c24bd2e8ce26132025-08-20T03:36:12ZengMDPI AGMicromachines2072-666X2025-07-0116782510.3390/mi16070825Layer-by-Layer Engineered Zinc–Tin Oxide/Single-Walled Carbon Nanotube (ZTO/SWNT) Hybrid Films for Thin-Film Transistor ApplicationsYong-Jae Kim0Young-Jik Lee1Yeon-Hee Kim2Byung Seong Bae3Woon-Seop Choi4Department of Semiconductor Engineering, Hoseo University, Asan 31499, Republic of KoreaDepartment of Semiconductor Engineering, Hoseo University, Asan 31499, Republic of KoreaDepartment of Semiconductor Engineering, Hoseo University, Asan 31499, Republic of KoreaDepartment of Semiconductor Engineering, Hoseo University, Asan 31499, Republic of KoreaDepartment of Semiconductor Engineering, Hoseo University, Asan 31499, Republic of KoreaIndium-based oxide semiconductors have been commercialized because of their excellent electrical properties, but the high cost, limited availability, and environmental toxicity of indium necessitate the development of alternative materials. Among the most promising candidates, zinc–tin oxide (ZTO) is an indium-free oxide semiconductor with considerable potential, but its relatively low carrier mobility and inherent limitations in thin-film quality demand further performance enhancements. This paper proposes a new approach to overcome these challenges by incorporating single-walled carbon nanotubes (SWNTs) as conductive fillers into the ZTO matrix and using a layer-by-layer multiple coating process to construct nanocomposite thin films. As a result, ZTO/SWNTs (0.07 wt.%) thin-film transistors (TFTs) fabricated with three coating cycles exhibited a high saturation mobility of 18.72 cm<sup>2</sup>/V·s, a threshold voltage of 0.84 V, and a subthreshold swing of 0.51 V/dec. These values represent an approximately four-fold improvement in mobility compared to ZTO TFT, showing that the multiple-coating-based nanocomposite strategy can effectively overcome the fundamental limitations. This study confirms the feasibility of achieving high-performance oxide semiconductor transistors without indium, providing a sustainable pathway for next-generation flexible electronics and display technologies.https://www.mdpi.com/2072-666X/16/7/825oxide TFTsingle-walled carbon nanotubeslayer by layerhybrid films
spellingShingle Yong-Jae Kim
Young-Jik Lee
Yeon-Hee Kim
Byung Seong Bae
Woon-Seop Choi
Layer-by-Layer Engineered Zinc–Tin Oxide/Single-Walled Carbon Nanotube (ZTO/SWNT) Hybrid Films for Thin-Film Transistor Applications
Micromachines
oxide TFT
single-walled carbon nanotubes
layer by layer
hybrid films
title Layer-by-Layer Engineered Zinc–Tin Oxide/Single-Walled Carbon Nanotube (ZTO/SWNT) Hybrid Films for Thin-Film Transistor Applications
title_full Layer-by-Layer Engineered Zinc–Tin Oxide/Single-Walled Carbon Nanotube (ZTO/SWNT) Hybrid Films for Thin-Film Transistor Applications
title_fullStr Layer-by-Layer Engineered Zinc–Tin Oxide/Single-Walled Carbon Nanotube (ZTO/SWNT) Hybrid Films for Thin-Film Transistor Applications
title_full_unstemmed Layer-by-Layer Engineered Zinc–Tin Oxide/Single-Walled Carbon Nanotube (ZTO/SWNT) Hybrid Films for Thin-Film Transistor Applications
title_short Layer-by-Layer Engineered Zinc–Tin Oxide/Single-Walled Carbon Nanotube (ZTO/SWNT) Hybrid Films for Thin-Film Transistor Applications
title_sort layer by layer engineered zinc tin oxide single walled carbon nanotube zto swnt hybrid films for thin film transistor applications
topic oxide TFT
single-walled carbon nanotubes
layer by layer
hybrid films
url https://www.mdpi.com/2072-666X/16/7/825
work_keys_str_mv AT yongjaekim layerbylayerengineeredzinctinoxidesinglewalledcarbonnanotubeztoswnthybridfilmsforthinfilmtransistorapplications
AT youngjiklee layerbylayerengineeredzinctinoxidesinglewalledcarbonnanotubeztoswnthybridfilmsforthinfilmtransistorapplications
AT yeonheekim layerbylayerengineeredzinctinoxidesinglewalledcarbonnanotubeztoswnthybridfilmsforthinfilmtransistorapplications
AT byungseongbae layerbylayerengineeredzinctinoxidesinglewalledcarbonnanotubeztoswnthybridfilmsforthinfilmtransistorapplications
AT woonseopchoi layerbylayerengineeredzinctinoxidesinglewalledcarbonnanotubeztoswnthybridfilmsforthinfilmtransistorapplications