Silicon photonic modulators with a 2 × 1 Fabry–Perot cavity
Silicon photonics modulators based on a 2 × 1 Fabry–Perot (FP) cavity, which is circulator-free, are proposed and demonstrated by introducing two asymmetric multimode-waveguide grating (AMWG) reflectors and a short straight modulation section with interleaved PN junctions. In particular, the straigh...
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De Gruyter
2025-01-01
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Series: | Nanophotonics |
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Online Access: | https://doi.org/10.1515/nanoph-2024-0488 |
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author | Cao Hengzhen Xie Jin Sun Weichao Zhu Mingyu Xiang Yuluan Zhang Gong Guo Jingshu Shi Yaocheng Dai Daoxin |
author_facet | Cao Hengzhen Xie Jin Sun Weichao Zhu Mingyu Xiang Yuluan Zhang Gong Guo Jingshu Shi Yaocheng Dai Daoxin |
author_sort | Cao Hengzhen |
collection | DOAJ |
description | Silicon photonics modulators based on a 2 × 1 Fabry–Perot (FP) cavity, which is circulator-free, are proposed and demonstrated by introducing two asymmetric multimode-waveguide grating (AMWG) reflectors and a short straight modulation section with interleaved PN junctions. In particular, the straight modulation section in the FP cavity is broadened to be far beyond the single-mode regime, alleviating the inherent sensitivity to the variations of waveguide dimensions and thus reducing stochastic resonance-wavelength variations. The Q factor of the FP cavity is manipulated by optimally manipulating the reflection of the AMWGs, and the modulation bandwidth is enhanced to be over 40 GHz by utilizing the optical peaking enhancement effect, which happens when operating at the wavelength slightly detuning to its resonance wavelength. Eye diagrams for high-speed modulation with 50 Gbps are also demonstrated in experiments. Finally, wafer-level measurement is conducted by characterizing the silicon photonic modulators based on the 2 × 1 FP cavity and a conventional microring fabricated on the same chip, experimentally revealing an average improvement of 43 % in minimizing the random resonance-wavelength variation, which is attributed to the implementation of broadening the straight modulation section in the FP cavity. |
format | Article |
id | doaj-art-02804f1f311e4e4b9ee001dbfea27c34 |
institution | Kabale University |
issn | 2192-8614 |
language | English |
publishDate | 2025-01-01 |
publisher | De Gruyter |
record_format | Article |
series | Nanophotonics |
spelling | doaj-art-02804f1f311e4e4b9ee001dbfea27c342025-02-10T13:24:47ZengDe GruyterNanophotonics2192-86142025-01-0114218319610.1515/nanoph-2024-0488Silicon photonic modulators with a 2 × 1 Fabry–Perot cavityCao Hengzhen0Xie Jin1Sun Weichao2Zhu Mingyu3Xiang Yuluan4Zhang Gong5Guo Jingshu6Shi Yaocheng7Dai Daoxin8State Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, Hangzhou310058, ChinaState Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, Hangzhou310058, ChinaState Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, Hangzhou310058, ChinaState Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, Hangzhou310058, ChinaState Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, Hangzhou310058, ChinaState Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, Hangzhou310058, ChinaState Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, Hangzhou310058, ChinaState Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, Hangzhou310058, ChinaState Key Laboratory of Extreme Photonics and Instrumentation, College of Optical Science and Engineering, International Research Center for Advanced Photonics, Zhejiang University, Zijingang Campus, Hangzhou310058, ChinaSilicon photonics modulators based on a 2 × 1 Fabry–Perot (FP) cavity, which is circulator-free, are proposed and demonstrated by introducing two asymmetric multimode-waveguide grating (AMWG) reflectors and a short straight modulation section with interleaved PN junctions. In particular, the straight modulation section in the FP cavity is broadened to be far beyond the single-mode regime, alleviating the inherent sensitivity to the variations of waveguide dimensions and thus reducing stochastic resonance-wavelength variations. The Q factor of the FP cavity is manipulated by optimally manipulating the reflection of the AMWGs, and the modulation bandwidth is enhanced to be over 40 GHz by utilizing the optical peaking enhancement effect, which happens when operating at the wavelength slightly detuning to its resonance wavelength. Eye diagrams for high-speed modulation with 50 Gbps are also demonstrated in experiments. Finally, wafer-level measurement is conducted by characterizing the silicon photonic modulators based on the 2 × 1 FP cavity and a conventional microring fabricated on the same chip, experimentally revealing an average improvement of 43 % in minimizing the random resonance-wavelength variation, which is attributed to the implementation of broadening the straight modulation section in the FP cavity.https://doi.org/10.1515/nanoph-2024-0488modulatorsilicon photonicssilicon modulatorresonant cavityfabry–perot cavity |
spellingShingle | Cao Hengzhen Xie Jin Sun Weichao Zhu Mingyu Xiang Yuluan Zhang Gong Guo Jingshu Shi Yaocheng Dai Daoxin Silicon photonic modulators with a 2 × 1 Fabry–Perot cavity Nanophotonics modulator silicon photonics silicon modulator resonant cavity fabry–perot cavity |
title | Silicon photonic modulators with a 2 × 1 Fabry–Perot cavity |
title_full | Silicon photonic modulators with a 2 × 1 Fabry–Perot cavity |
title_fullStr | Silicon photonic modulators with a 2 × 1 Fabry–Perot cavity |
title_full_unstemmed | Silicon photonic modulators with a 2 × 1 Fabry–Perot cavity |
title_short | Silicon photonic modulators with a 2 × 1 Fabry–Perot cavity |
title_sort | silicon photonic modulators with a 2 1 fabry perot cavity |
topic | modulator silicon photonics silicon modulator resonant cavity fabry–perot cavity |
url | https://doi.org/10.1515/nanoph-2024-0488 |
work_keys_str_mv | AT caohengzhen siliconphotonicmodulatorswitha21fabryperotcavity AT xiejin siliconphotonicmodulatorswitha21fabryperotcavity AT sunweichao siliconphotonicmodulatorswitha21fabryperotcavity AT zhumingyu siliconphotonicmodulatorswitha21fabryperotcavity AT xiangyuluan siliconphotonicmodulatorswitha21fabryperotcavity AT zhanggong siliconphotonicmodulatorswitha21fabryperotcavity AT guojingshu siliconphotonicmodulatorswitha21fabryperotcavity AT shiyaocheng siliconphotonicmodulatorswitha21fabryperotcavity AT daidaoxin siliconphotonicmodulatorswitha21fabryperotcavity |