Pressure-dependent current transport in vertical BP/MoS2 heterostructures
van der Waals heterostructures between two-dimensional (2D) materials offer versatile platforms for innovative electrical device architectures and applications. Black phosphorus (BP) and molybdenum disulfide (MoS2) emerge as promising candidates for heterostructures, owing to their exceptional elect...
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| Language: | English |
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Elsevier
2025-02-01
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| Series: | Heliyon |
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| Online Access: | http://www.sciencedirect.com/science/article/pii/S2405844025008230 |
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| author | Ofelia Durante Sebastiano De Stefano Adolfo Mazzotti Loredana Viscardi Filippo Giubileo Osamah Kharsah Leon Daniel Stephan Sleziona Marika Schleberger Antonio Di Bartolomeo |
| author_facet | Ofelia Durante Sebastiano De Stefano Adolfo Mazzotti Loredana Viscardi Filippo Giubileo Osamah Kharsah Leon Daniel Stephan Sleziona Marika Schleberger Antonio Di Bartolomeo |
| author_sort | Ofelia Durante |
| collection | DOAJ |
| description | van der Waals heterostructures between two-dimensional (2D) materials offer versatile platforms for innovative electrical device architectures and applications. Black phosphorus (BP) and molybdenum disulfide (MoS2) emerge as promising candidates for heterostructures, owing to their exceptional electronic properties and gate-tunable capabilities. In this work, we study the electrical properties of a vertical BP/MoS2 heterostructure fabricated onto a SiO2/Si substrate in a back-gate configuration. We focus on the effect of air pressure, from atmospheric pressure to 10−4 mbar, and show that best electrical performances are enabled at the lower pressure. The heterostructure exhibits gate-tunable rectifying current-voltage characteristics, with a rectification ratio close to 103. The rectifying characteristics present a kink in the forward region revealing different conduction mechanisms, namely drift-diffusion and band-to-band tunneling. Furthermore, when used as a transistor, the device shows n-type conduction, high gate modulation with ON/OFF ratio of 106, low off-state current of 10−14A and mobility of 1.6 cm2 V−1 s−1. The results of this work highlight the potential of BP/MoS2 heterostructures for applications in low-power electronics, high-performance transistors, and sensitive pressure sensors. |
| format | Article |
| id | doaj-art-0226d2c4e83b498ebc65eb6073d08a10 |
| institution | Kabale University |
| issn | 2405-8440 |
| language | English |
| publishDate | 2025-02-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Heliyon |
| spelling | doaj-art-0226d2c4e83b498ebc65eb6073d08a102025-02-07T04:47:57ZengElsevierHeliyon2405-84402025-02-01113e42443Pressure-dependent current transport in vertical BP/MoS2 heterostructuresOfelia Durante0Sebastiano De Stefano1Adolfo Mazzotti2Loredana Viscardi3Filippo Giubileo4Osamah Kharsah5Leon Daniel6Stephan Sleziona7Marika Schleberger8Antonio Di Bartolomeo9Department of Physics “E. R. Caianiello”, University of Salerno, via Giovanni Paolo II, Fisciano, Salerno, 84084, ItalyDepartment of Physics “E. R. Caianiello”, University of Salerno, via Giovanni Paolo II, Fisciano, Salerno, 84084, ItalyDepartment of Physics “E. R. Caianiello”, University of Salerno, via Giovanni Paolo II, Fisciano, Salerno, 84084, ItalyDepartment of Physics “E. R. Caianiello”, University of Salerno, via Giovanni Paolo II, Fisciano, Salerno, 84084, ItalyCNR-SPIN, via Giovanni Paolo II, Fisciano, Salerno, 84084, ItalyFakultät für Physik and CENIDE, Universität Duisburg-Essen, Lotharstrasse 1, Duisburg D-47057, GermanyFakultät für Physik and CENIDE, Universität Duisburg-Essen, Lotharstrasse 1, Duisburg D-47057, GermanyFakultät für Physik and CENIDE, Universität Duisburg-Essen, Lotharstrasse 1, Duisburg D-47057, GermanyFakultät für Physik and CENIDE, Universität Duisburg-Essen, Lotharstrasse 1, Duisburg D-47057, Germany; Corresponding author.Department of Physics “E. R. Caianiello”, University of Salerno, via Giovanni Paolo II, Fisciano, Salerno, 84084, Italy; Corresponding author.van der Waals heterostructures between two-dimensional (2D) materials offer versatile platforms for innovative electrical device architectures and applications. Black phosphorus (BP) and molybdenum disulfide (MoS2) emerge as promising candidates for heterostructures, owing to their exceptional electronic properties and gate-tunable capabilities. In this work, we study the electrical properties of a vertical BP/MoS2 heterostructure fabricated onto a SiO2/Si substrate in a back-gate configuration. We focus on the effect of air pressure, from atmospheric pressure to 10−4 mbar, and show that best electrical performances are enabled at the lower pressure. The heterostructure exhibits gate-tunable rectifying current-voltage characteristics, with a rectification ratio close to 103. The rectifying characteristics present a kink in the forward region revealing different conduction mechanisms, namely drift-diffusion and band-to-band tunneling. Furthermore, when used as a transistor, the device shows n-type conduction, high gate modulation with ON/OFF ratio of 106, low off-state current of 10−14A and mobility of 1.6 cm2 V−1 s−1. The results of this work highlight the potential of BP/MoS2 heterostructures for applications in low-power electronics, high-performance transistors, and sensitive pressure sensors.http://www.sciencedirect.com/science/article/pii/S2405844025008230PressureKinkThermionicTunnelingRectification ratioBP |
| spellingShingle | Ofelia Durante Sebastiano De Stefano Adolfo Mazzotti Loredana Viscardi Filippo Giubileo Osamah Kharsah Leon Daniel Stephan Sleziona Marika Schleberger Antonio Di Bartolomeo Pressure-dependent current transport in vertical BP/MoS2 heterostructures Heliyon Pressure Kink Thermionic Tunneling Rectification ratio BP |
| title | Pressure-dependent current transport in vertical BP/MoS2 heterostructures |
| title_full | Pressure-dependent current transport in vertical BP/MoS2 heterostructures |
| title_fullStr | Pressure-dependent current transport in vertical BP/MoS2 heterostructures |
| title_full_unstemmed | Pressure-dependent current transport in vertical BP/MoS2 heterostructures |
| title_short | Pressure-dependent current transport in vertical BP/MoS2 heterostructures |
| title_sort | pressure dependent current transport in vertical bp mos2 heterostructures |
| topic | Pressure Kink Thermionic Tunneling Rectification ratio BP |
| url | http://www.sciencedirect.com/science/article/pii/S2405844025008230 |
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