Charge trapping in SiO2 substrate during electron beam deposition of CaF2 thin films of different thicknesses
The charge trapping phenomenon in the SiO2 layer of Si/SiO2 substrates during the electron beam deposition of CaF2 thin films of varying thicknesses (50–277 nm) was studied. Photoelectron emission (PE) spectroscopy was employed to analyze electron trapping mechanisms induced by the deposition proces...
Saved in:
| Main Authors: | , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2025-02-01
|
| Series: | Optical Materials: X |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2590147825000026 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| _version_ | 1825199386096828416 |
|---|---|
| author | Marina Romanova Sergii Chertopalov Yuri Dekhtyar Ladislav Fekete Ján Lančok Michal Novotný Petr Pokorný Anatoli I. Popov Hermanis Sorokins Aleksandr Vilken |
| author_facet | Marina Romanova Sergii Chertopalov Yuri Dekhtyar Ladislav Fekete Ján Lančok Michal Novotný Petr Pokorný Anatoli I. Popov Hermanis Sorokins Aleksandr Vilken |
| author_sort | Marina Romanova |
| collection | DOAJ |
| description | The charge trapping phenomenon in the SiO2 layer of Si/SiO2 substrates during the electron beam deposition of CaF2 thin films of varying thicknesses (50–277 nm) was studied. Photoelectron emission (PE) spectroscopy was employed to analyze electron trapping mechanisms induced by the deposition process. Distinct peaks corresponding to electron traps in the SiO2 layer were identified in the PE spectra of CaF2 films. The intensity of these peaks varied with the film thickness and the accumulated electron irradiation dose. The study also investigated the relaxation of the PE spectra in both vacuum and air environments. In a vacuum, the PE peaks and integrated PE intensity remained stable for at least 24 h for CaF2 films of all thicknesses. When exposed to air, the PE peaks persisted for several days in films 125 nm thick or thinner but relaxed within several hours in 277 nm films. This rapid relaxation was attributed to a relatively high irradiation dose (about 2.5 mC) obtained during the fabrication of the 277 nm film, leading to an increased concentration of ionized F centers at the SiO2–CaF2 interface and the formation of (O2–-VA) centers upon air exposure. The relaxation of the PE spectrum intensity was attributed to electron transfer from SiO2 traps to (O2–-VA) centers. Furthermore, the possibility of a 260 nm electron escape depth for CaF2 material was confirmed. |
| format | Article |
| id | doaj-art-01f49a20e460485aa130b5e50a4d084b |
| institution | Kabale University |
| issn | 2590-1478 |
| language | English |
| publishDate | 2025-02-01 |
| publisher | Elsevier |
| record_format | Article |
| series | Optical Materials: X |
| spelling | doaj-art-01f49a20e460485aa130b5e50a4d084b2025-02-08T05:01:05ZengElsevierOptical Materials: X2590-14782025-02-0125100400Charge trapping in SiO2 substrate during electron beam deposition of CaF2 thin films of different thicknessesMarina Romanova0Sergii Chertopalov1Yuri Dekhtyar2Ladislav Fekete3Ján Lančok4Michal Novotný5Petr Pokorný6Anatoli I. Popov7Hermanis Sorokins8Aleksandr Vilken9Institute of Mechanical and Biomedical Engineering, Riga Technical University, Kipsalas Str. 6B, LV-1048, Riga, Latvia; Corresponding author.Institute of Physics, Czech Academy of Sciences, Na Slovance, 1999/2, Prague 8, 182 00, Czech RepublicInstitute of Mechanical and Biomedical Engineering, Riga Technical University, Kipsalas Str. 6B, LV-1048, Riga, LatviaInstitute of Physics, Czech Academy of Sciences, Na Slovance, 1999/2, Prague 8, 182 00, Czech RepublicInstitute of Physics, Czech Academy of Sciences, Na Slovance, 1999/2, Prague 8, 182 00, Czech RepublicInstitute of Physics, Czech Academy of Sciences, Na Slovance, 1999/2, Prague 8, 182 00, Czech RepublicInstitute of Physics, Czech Academy of Sciences, Na Slovance, 1999/2, Prague 8, 182 00, Czech RepublicInstitute of Solid State Physics, University of Latvia, 8 Kengaraga Str., LV-1063, Riga, LatviaInstitute of Mechanical and Biomedical Engineering, Riga Technical University, Kipsalas Str. 6B, LV-1048, Riga, LatviaInstitute of Mechanical and Biomedical Engineering, Riga Technical University, Kipsalas Str. 6B, LV-1048, Riga, LatviaThe charge trapping phenomenon in the SiO2 layer of Si/SiO2 substrates during the electron beam deposition of CaF2 thin films of varying thicknesses (50–277 nm) was studied. Photoelectron emission (PE) spectroscopy was employed to analyze electron trapping mechanisms induced by the deposition process. Distinct peaks corresponding to electron traps in the SiO2 layer were identified in the PE spectra of CaF2 films. The intensity of these peaks varied with the film thickness and the accumulated electron irradiation dose. The study also investigated the relaxation of the PE spectra in both vacuum and air environments. In a vacuum, the PE peaks and integrated PE intensity remained stable for at least 24 h for CaF2 films of all thicknesses. When exposed to air, the PE peaks persisted for several days in films 125 nm thick or thinner but relaxed within several hours in 277 nm films. This rapid relaxation was attributed to a relatively high irradiation dose (about 2.5 mC) obtained during the fabrication of the 277 nm film, leading to an increased concentration of ionized F centers at the SiO2–CaF2 interface and the formation of (O2–-VA) centers upon air exposure. The relaxation of the PE spectrum intensity was attributed to electron transfer from SiO2 traps to (O2–-VA) centers. Furthermore, the possibility of a 260 nm electron escape depth for CaF2 material was confirmed.http://www.sciencedirect.com/science/article/pii/S2590147825000026Calcium fluorideSilicon dioxideElectron beam depositionCharge trappingElectron irradiationPhotoelectron emission |
| spellingShingle | Marina Romanova Sergii Chertopalov Yuri Dekhtyar Ladislav Fekete Ján Lančok Michal Novotný Petr Pokorný Anatoli I. Popov Hermanis Sorokins Aleksandr Vilken Charge trapping in SiO2 substrate during electron beam deposition of CaF2 thin films of different thicknesses Optical Materials: X Calcium fluoride Silicon dioxide Electron beam deposition Charge trapping Electron irradiation Photoelectron emission |
| title | Charge trapping in SiO2 substrate during electron beam deposition of CaF2 thin films of different thicknesses |
| title_full | Charge trapping in SiO2 substrate during electron beam deposition of CaF2 thin films of different thicknesses |
| title_fullStr | Charge trapping in SiO2 substrate during electron beam deposition of CaF2 thin films of different thicknesses |
| title_full_unstemmed | Charge trapping in SiO2 substrate during electron beam deposition of CaF2 thin films of different thicknesses |
| title_short | Charge trapping in SiO2 substrate during electron beam deposition of CaF2 thin films of different thicknesses |
| title_sort | charge trapping in sio2 substrate during electron beam deposition of caf2 thin films of different thicknesses |
| topic | Calcium fluoride Silicon dioxide Electron beam deposition Charge trapping Electron irradiation Photoelectron emission |
| url | http://www.sciencedirect.com/science/article/pii/S2590147825000026 |
| work_keys_str_mv | AT marinaromanova chargetrappinginsio2substrateduringelectronbeamdepositionofcaf2thinfilmsofdifferentthicknesses AT sergiichertopalov chargetrappinginsio2substrateduringelectronbeamdepositionofcaf2thinfilmsofdifferentthicknesses AT yuridekhtyar chargetrappinginsio2substrateduringelectronbeamdepositionofcaf2thinfilmsofdifferentthicknesses AT ladislavfekete chargetrappinginsio2substrateduringelectronbeamdepositionofcaf2thinfilmsofdifferentthicknesses AT janlancok chargetrappinginsio2substrateduringelectronbeamdepositionofcaf2thinfilmsofdifferentthicknesses AT michalnovotny chargetrappinginsio2substrateduringelectronbeamdepositionofcaf2thinfilmsofdifferentthicknesses AT petrpokorny chargetrappinginsio2substrateduringelectronbeamdepositionofcaf2thinfilmsofdifferentthicknesses AT anatoliipopov chargetrappinginsio2substrateduringelectronbeamdepositionofcaf2thinfilmsofdifferentthicknesses AT hermanissorokins chargetrappinginsio2substrateduringelectronbeamdepositionofcaf2thinfilmsofdifferentthicknesses AT aleksandrvilken chargetrappinginsio2substrateduringelectronbeamdepositionofcaf2thinfilmsofdifferentthicknesses |