On the Reliability of Accelerated Testing in AIGaAs/InGaAs/GaAs PHEMTs
The study of different stress on device characteristics of AlGaAs/InGaAs/GaAs PHEMTs has been researched and developed in this report. Many catastrophic degradation mechanisms such as hot-electron, gate-drain breakdown, IDS, IG , VP and gate Schottky barrier effects are discussed in detail. In addi...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2002-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1080/0882751031000073888 |
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