On the Reliability of Accelerated Testing in AIGaAs/InGaAs/GaAs PHEMTs
The study of different stress on device characteristics of AlGaAs/InGaAs/GaAs PHEMTs has been researched and developed in this report. Many catastrophic degradation mechanisms such as hot-electron, gate-drain breakdown, IDS, IG , VP and gate Schottky barrier effects are discussed in detail. In addi...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2002-01-01
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| Series: | Active and Passive Electronic Components |
| Online Access: | http://dx.doi.org/10.1080/0882751031000073888 |
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| _version_ | 1832564377313607680 |
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| author | K. F. Yarn W. C. Chien C. S. Wang |
| author_facet | K. F. Yarn W. C. Chien C. S. Wang |
| author_sort | K. F. Yarn |
| collection | DOAJ |
| description | The study of different stress on device characteristics of AlGaAs/InGaAs/GaAs PHEMTs has been researched and developed in this report. Many catastrophic degradation mechanisms such as hot-electron, gate-drain breakdown, IDS, IG
, VP
and gate Schottky barrier effects are discussed in detail. In addition, the accelerated testing of the
temperature-dependent effects on ID
,Gm
and Schottky barrier are examined. |
| format | Article |
| id | doaj-art-019ffb631b9c4b5a8cb65446f9878b12 |
| institution | Kabale University |
| issn | 0882-7516 1563-5031 |
| language | English |
| publishDate | 2002-01-01 |
| publisher | Wiley |
| record_format | Article |
| series | Active and Passive Electronic Components |
| spelling | doaj-art-019ffb631b9c4b5a8cb65446f9878b122025-02-03T01:11:06ZengWileyActive and Passive Electronic Components0882-75161563-50312002-01-0126211512710.1080/0882751031000073888On the Reliability of Accelerated Testing in AIGaAs/InGaAs/GaAs PHEMTsK. F. Yarn0W. C. Chien1C. S. Wang2Far East College, Department of Electrical Engineering, Optoelectronic Semiconductor Center, Hsin-Shih, Tainan, Taiwan 744, ChinaFar East College, Department of Electrical Engineering, Optoelectronic Semiconductor Center, Hsin-Shih, Tainan, Taiwan 744, ChinaNational Cheng Kung University, Department of Electrical Engineering, Tainan, Taiwan 701, ChinaThe study of different stress on device characteristics of AlGaAs/InGaAs/GaAs PHEMTs has been researched and developed in this report. Many catastrophic degradation mechanisms such as hot-electron, gate-drain breakdown, IDS, IG , VP and gate Schottky barrier effects are discussed in detail. In addition, the accelerated testing of the temperature-dependent effects on ID ,Gm and Schottky barrier are examined.http://dx.doi.org/10.1080/0882751031000073888 |
| spellingShingle | K. F. Yarn W. C. Chien C. S. Wang On the Reliability of Accelerated Testing in AIGaAs/InGaAs/GaAs PHEMTs Active and Passive Electronic Components |
| title | On the Reliability of Accelerated Testing in AIGaAs/InGaAs/GaAs
PHEMTs |
| title_full | On the Reliability of Accelerated Testing in AIGaAs/InGaAs/GaAs
PHEMTs |
| title_fullStr | On the Reliability of Accelerated Testing in AIGaAs/InGaAs/GaAs
PHEMTs |
| title_full_unstemmed | On the Reliability of Accelerated Testing in AIGaAs/InGaAs/GaAs
PHEMTs |
| title_short | On the Reliability of Accelerated Testing in AIGaAs/InGaAs/GaAs
PHEMTs |
| title_sort | on the reliability of accelerated testing in aigaas ingaas gaas phemts |
| url | http://dx.doi.org/10.1080/0882751031000073888 |
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