Free-Electron Screening Mechanism of the Shallow Impurity Breakdown in n-GaAs: Evidences from the Photoelectric Zeeman and Cyclotron Resonance Spectroscopies
A novel breakdown (BD) mechanism of shallow impurity (SI) under the electric field at low temperatures is suggested for n‐GaAs samples with the donor concentrations 1014 cm−3≤ND≤1016 cm−3 and the compensation degree 0.3≤K=NA/ND≤0.8 with acceptors of concentration NA in the external magnetic fields u...
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| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2019-01-01
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| Series: | Journal of Spectroscopy |
| Online Access: | http://dx.doi.org/10.1155/2019/1915320 |
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