Free-Electron Screening Mechanism of the Shallow Impurity Breakdown in n-GaAs: Evidences from the Photoelectric Zeeman and Cyclotron Resonance Spectroscopies
A novel breakdown (BD) mechanism of shallow impurity (SI) under the electric field at low temperatures is suggested for n‐GaAs samples with the donor concentrations 1014 cm−3≤ND≤1016 cm−3 and the compensation degree 0.3≤K=NA/ND≤0.8 with acceptors of concentration NA in the external magnetic fields u...
Saved in:
| Main Authors: | , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Wiley
2019-01-01
|
| Series: | Journal of Spectroscopy |
| Online Access: | http://dx.doi.org/10.1155/2019/1915320 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|