Structure of transitional layer forming in Mo-Si system by P+ ion implantation over molybdenum film
Questions of the implantation fluency of Si(111) by phosphorus ions influence, the effect of post-implant annealing of Si implantation and an annealing of Mo-Si system and of irradiation by phosphorus ions of generated ohmic contact of system Mo-Si and an annealing at low temperatures on the structu...
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| Main Authors: | , |
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| Format: | Article |
| Language: | Russian |
| Published: |
Educational institution «Belarusian State University of Informatics and Radioelectronics»
2019-06-01
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| Series: | Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki |
| Subjects: | |
| Online Access: | https://doklady.bsuir.by/jour/article/view/825 |
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