A method for monitoring junction temperature of IGBT module based on turn-off voltage
The precise junction temperature monitoring is of paramount importance for enhancing the reliability of insulated gate bipolar transistor (IGBT) modules and extending the lifespan of devices. This paper introduces a method for monitoring junction temperature of IGBT modules based on turn-off voltage...
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| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | zho |
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Editorial Department of Electric Drive for Locomotives
2024-03-01
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| Series: | 机车电传动 |
| Subjects: | |
| Online Access: | http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128X.2024.02.016 |
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| _version_ | 1850274136302026752 |
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| author | LAN Weiyin CUI Wei CHEN Wenxuan ZOU Yingqiao LI Jiacheng GE Xinglai |
| author_facet | LAN Weiyin CUI Wei CHEN Wenxuan ZOU Yingqiao LI Jiacheng GE Xinglai |
| author_sort | LAN Weiyin |
| collection | DOAJ |
| description | The precise junction temperature monitoring is of paramount importance for enhancing the reliability of insulated gate bipolar transistor (IGBT) modules and extending the lifespan of devices. This paper introduces a method for monitoring junction temperature of IGBT modules based on turn-off voltages (TOV), which highlights resistance to load currents. The study initially verified the rationality of using TOVs as a temperature-sensitive electrical parameter. The deep neural network (DNN) technology was subsequently employed to eradicate the dependence of TOVs on load currents, facilitating accurate junction temperature prediction under varying operational conditions. The proposed method was validated through a single-phase pulse width modulation (PWM) experiment. The findings reveal an error range of ±5 ℃ for this method, demonstrating the feasibility of optimizing junction temperature monitoring through DNN utilization. |
| format | Article |
| id | doaj-art-005aa466c4e8430ebf1734f02f6f2060 |
| institution | OA Journals |
| issn | 1000-128X |
| language | zho |
| publishDate | 2024-03-01 |
| publisher | Editorial Department of Electric Drive for Locomotives |
| record_format | Article |
| series | 机车电传动 |
| spelling | doaj-art-005aa466c4e8430ebf1734f02f6f20602025-08-20T01:51:13ZzhoEditorial Department of Electric Drive for Locomotives机车电传动1000-128X2024-03-0113213956094707A method for monitoring junction temperature of IGBT module based on turn-off voltageLAN WeiyinCUI WeiCHEN WenxuanZOU YingqiaoLI JiachengGE XinglaiThe precise junction temperature monitoring is of paramount importance for enhancing the reliability of insulated gate bipolar transistor (IGBT) modules and extending the lifespan of devices. This paper introduces a method for monitoring junction temperature of IGBT modules based on turn-off voltages (TOV), which highlights resistance to load currents. The study initially verified the rationality of using TOVs as a temperature-sensitive electrical parameter. The deep neural network (DNN) technology was subsequently employed to eradicate the dependence of TOVs on load currents, facilitating accurate junction temperature prediction under varying operational conditions. The proposed method was validated through a single-phase pulse width modulation (PWM) experiment. The findings reveal an error range of ±5 ℃ for this method, demonstrating the feasibility of optimizing junction temperature monitoring through DNN utilization.http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128X.2024.02.016insulated gate bipolar transistor (IGBT)junction temperature monitoringdeep neutral network (DNN)temperature-sensitive parameterturn-off voltage (TOV) |
| spellingShingle | LAN Weiyin CUI Wei CHEN Wenxuan ZOU Yingqiao LI Jiacheng GE Xinglai A method for monitoring junction temperature of IGBT module based on turn-off voltage 机车电传动 insulated gate bipolar transistor (IGBT) junction temperature monitoring deep neutral network (DNN) temperature-sensitive parameter turn-off voltage (TOV) |
| title | A method for monitoring junction temperature of IGBT module based on turn-off voltage |
| title_full | A method for monitoring junction temperature of IGBT module based on turn-off voltage |
| title_fullStr | A method for monitoring junction temperature of IGBT module based on turn-off voltage |
| title_full_unstemmed | A method for monitoring junction temperature of IGBT module based on turn-off voltage |
| title_short | A method for monitoring junction temperature of IGBT module based on turn-off voltage |
| title_sort | method for monitoring junction temperature of igbt module based on turn off voltage |
| topic | insulated gate bipolar transistor (IGBT) junction temperature monitoring deep neutral network (DNN) temperature-sensitive parameter turn-off voltage (TOV) |
| url | http://edl.csrzic.com/thesisDetails#10.13890/j.issn.1000-128X.2024.02.016 |
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