Laser Cleaning‐Assisted Femtosecond Laser Direct Writing of Diamond Antireflective Microstructures with Superhigh Transmittance of 94.5% at 10.6 μm
Diamond‐based subwavelength antireflective microstructures are corrosion resistant, impact resistant, and possess high transmittance, thereby presenting broad application prospects in special optical windows. Nevertheless, fabricating uniform and highly transmissive subwavelength antireflective micr...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2025-06-01
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| Series: | Small Structures |
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| Online Access: | https://doi.org/10.1002/sstr.202400590 |
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| author | He Cao Yun‐Fei Li Gong Wang Hong‐Yu Li De‐Rong Sun Zi‐Qi Tang Li‐Fang Li Zhong‐Shan Jin Yu Yu Xue‐Qing Liu Yu‐Lei Wang Zhi‐Wei Lv Qi‐Dai Chen |
| author_facet | He Cao Yun‐Fei Li Gong Wang Hong‐Yu Li De‐Rong Sun Zi‐Qi Tang Li‐Fang Li Zhong‐Shan Jin Yu Yu Xue‐Qing Liu Yu‐Lei Wang Zhi‐Wei Lv Qi‐Dai Chen |
| author_sort | He Cao |
| collection | DOAJ |
| description | Diamond‐based subwavelength antireflective microstructures are corrosion resistant, impact resistant, and possess high transmittance, thereby presenting broad application prospects in special optical windows. Nevertheless, fabricating uniform and highly transmissive subwavelength antireflective microstructures on diamond surfaces poses a significant challenge. The hard and brittle properties of diamond result in a large number of chips and particles, adhering to the surfaces during processing, which subsequently impacts the subsequent processing. Herein, a laser cleaning‐assisted femtosecond laser direct‐write processing technology is reported for fabricating subwavelength antireflective microstructures on diamond. To effectively avert the effects of chip accumulation, an elliptical laser spot is employed to clear the chips and polish the microstructure surface. The resulting highquality midinfrared antireflective microstructures are fabricated on diamond, and high transmittance (94.5%, with a 24.4% increase at 10 μm) within a broadband range (10–12 μm) is obtained, which represents the best results without antireflective coatings to the best of knowledge. Moreover, the antireflective structure possesses no significant angular dependence and maintains good working efficiency even at high temperature. |
| format | Article |
| id | doaj-art-0008d7acb10742bb9de7b06e71dc26a0 |
| institution | Kabale University |
| issn | 2688-4062 |
| language | English |
| publishDate | 2025-06-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Small Structures |
| spelling | doaj-art-0008d7acb10742bb9de7b06e71dc26a02025-08-20T03:26:00ZengWiley-VCHSmall Structures2688-40622025-06-0166n/an/a10.1002/sstr.202400590Laser Cleaning‐Assisted Femtosecond Laser Direct Writing of Diamond Antireflective Microstructures with Superhigh Transmittance of 94.5% at 10.6 μmHe Cao0Yun‐Fei Li1Gong Wang2Hong‐Yu Li3De‐Rong Sun4Zi‐Qi Tang5Li‐Fang Li6Zhong‐Shan Jin7Yu Yu8Xue‐Qing Liu9Yu‐Lei Wang10Zhi‐Wei Lv11Qi‐Dai Chen12Center for Advanced Laser Technology Hebei University of Technology Tianjin 300401 ChinaCenter for Advanced Laser Technology Hebei University of Technology Tianjin 300401 ChinaCenter for Advanced Laser Technology Hebei University of Technology Tianjin 300401 ChinaState Key Laboratory of Integrated Optoelectronics College of Electronic Science and Engineering Jilin University Changchun 130012 ChinaCenter for Advanced Laser Technology Hebei University of Technology Tianjin 300401 ChinaCenter for Advanced Laser Technology Hebei University of Technology Tianjin 300401 ChinaCenter for Advanced Laser Technology Hebei University of Technology Tianjin 300401 ChinaCenter for Advanced Laser Technology Hebei University of Technology Tianjin 300401 ChinaCenter for Advanced Laser Technology Hebei University of Technology Tianjin 300401 ChinaState Key Laboratory of Integrated Optoelectronics College of Electronic Science and Engineering Jilin University Changchun 130012 ChinaCenter for Advanced Laser Technology Hebei University of Technology Tianjin 300401 ChinaCenter for Advanced Laser Technology Hebei University of Technology Tianjin 300401 ChinaState Key Laboratory of Integrated Optoelectronics College of Electronic Science and Engineering Jilin University Changchun 130012 ChinaDiamond‐based subwavelength antireflective microstructures are corrosion resistant, impact resistant, and possess high transmittance, thereby presenting broad application prospects in special optical windows. Nevertheless, fabricating uniform and highly transmissive subwavelength antireflective microstructures on diamond surfaces poses a significant challenge. The hard and brittle properties of diamond result in a large number of chips and particles, adhering to the surfaces during processing, which subsequently impacts the subsequent processing. Herein, a laser cleaning‐assisted femtosecond laser direct‐write processing technology is reported for fabricating subwavelength antireflective microstructures on diamond. To effectively avert the effects of chip accumulation, an elliptical laser spot is employed to clear the chips and polish the microstructure surface. The resulting highquality midinfrared antireflective microstructures are fabricated on diamond, and high transmittance (94.5%, with a 24.4% increase at 10 μm) within a broadband range (10–12 μm) is obtained, which represents the best results without antireflective coatings to the best of knowledge. Moreover, the antireflective structure possesses no significant angular dependence and maintains good working efficiency even at high temperature.https://doi.org/10.1002/sstr.202400590antireflectionsdiamondsfemtosecond lasersmicrostructures optical windows |
| spellingShingle | He Cao Yun‐Fei Li Gong Wang Hong‐Yu Li De‐Rong Sun Zi‐Qi Tang Li‐Fang Li Zhong‐Shan Jin Yu Yu Xue‐Qing Liu Yu‐Lei Wang Zhi‐Wei Lv Qi‐Dai Chen Laser Cleaning‐Assisted Femtosecond Laser Direct Writing of Diamond Antireflective Microstructures with Superhigh Transmittance of 94.5% at 10.6 μm Small Structures antireflections diamonds femtosecond lasers microstructures optical windows |
| title | Laser Cleaning‐Assisted Femtosecond Laser Direct Writing of Diamond Antireflective Microstructures with Superhigh Transmittance of 94.5% at 10.6 μm |
| title_full | Laser Cleaning‐Assisted Femtosecond Laser Direct Writing of Diamond Antireflective Microstructures with Superhigh Transmittance of 94.5% at 10.6 μm |
| title_fullStr | Laser Cleaning‐Assisted Femtosecond Laser Direct Writing of Diamond Antireflective Microstructures with Superhigh Transmittance of 94.5% at 10.6 μm |
| title_full_unstemmed | Laser Cleaning‐Assisted Femtosecond Laser Direct Writing of Diamond Antireflective Microstructures with Superhigh Transmittance of 94.5% at 10.6 μm |
| title_short | Laser Cleaning‐Assisted Femtosecond Laser Direct Writing of Diamond Antireflective Microstructures with Superhigh Transmittance of 94.5% at 10.6 μm |
| title_sort | laser cleaning assisted femtosecond laser direct writing of diamond antireflective microstructures with superhigh transmittance of 94 5 at 10 6 μm |
| topic | antireflections diamonds femtosecond lasers microstructures optical windows |
| url | https://doi.org/10.1002/sstr.202400590 |
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