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    Improving Breakdown Voltage for a Novel SOI LDMOS with a Lateral Variable Doping Profile on the Top Interface of the Buried Oxide Layer

    Improving Breakdown Voltage for a Novel SOI LDMOS with a Lateral Variable Doping Profile on the Top Interface of the Buried Oxide Layer by Jingjing Jin, Shengdong Hu, Yinhui Chen, Kaizhou Tan, Jun Luo, Feng Zhou, Zongze Chen, Ye Huang

    Published 2015-01-01
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