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    Reduction of Interface State Density in 4H-SiC MOS Capacitors Modified by ALD-Deposited Interlayers

    Reduction of Interface State Density in 4H-SiC MOS Capacitors Modified by ALD-Deposited Interlayers by Zhenyu Wang, Zhaopeng Bai, Yunduo Guo, Chengxi Ding, Qimin Huang, Lin Gu, Yi Shen, Qingchun Zhang, Hongping Ma

    Published 2025-04-01
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