Homoepitaxial growth of thick Si-doped β-Ga2O3 layers using tetramethylsilane as a dopant source by low-pressure hot-wall metalorganic vapor phase epitaxy by Junya Yoshinaga, Yoshiki Iba, Kakeru Kubota, Yuma Terauchi, Takahito Okuyama, Shogo Sasaki, Kazutada Ikenaga, Takeyoshi Onuma, Masataka Higashiwaki, Kazushige Shiina, Shuichi Koseki, Yuzaburo Ban, Yoshinao Kumagai

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