Room-Temperature Magnetoelectric Switching and Magnetoelectric Memory Driven by Gate Voltage by Yang Cheng, Teng Xu, Di Tian, Xing He, Yiqing Dong, Hao Bai, Le Zhao, Haonan Jin, Shilei Zhang, Weibin Li, Manuel Valvidares, Pu Yu, Wanjun Jiang

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