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    Ge N‐Channel Ferroelectric FET Memory With Al2O3/AlN Interfacial Layer by Microwave Annealing

    Ge N‐Channel Ferroelectric FET Memory With Al2O3/AlN Interfacial Layer by Microwave Annealing by Sheng‐Yen Zheng, Wei‐Ning Kao, Yu‐Hsing Chen, Yung‐Hsien Wu

    Published 2025-06-01
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