Influence of rapid thermal treatment of the gate dielectric on the parameters of power field МОSFЕТ transistors by V. A. Solodukha, U. A. Pilipenko, V. A. Gorushko

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DEPTH MEASUREMENT OF DISRUPTED LAYER ON SILICON WAFER SURFACE USING AUGER SPECTROSCOPY METHOD by V. A. Solodukha, A. I. Belous, G. G. Chyhir

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Rapid thermal treatment modes of the Рt-Si system for formation of platinum silicide by V. A. Solodukha, V. A. Pilipenko, V. A. Gorushko

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Structure of Silicon Wafers Planar Surface before and after Rapid Thermal Treatment by U. A. Pilipenko, A. A. Sergeichik, D. V. Shestovski, V. A. Solodukha

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Spectral Ellipsometry as a Method of Investigation of Influence of Rapid Thermal Processing of Silicon Wafers on their Optical Characteristics by V. A. Solodukha, U. A. Pilipenko, A. A. Omelchenko, D. V. Shestovski

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Formation of a gate dielectric of nanometer thickness by rapid thermal treatment by N. S. Kovalchuk, A. A. Omelchenko, V. A. Pilipenko, V. A. Solodukha, D. V. Shestovski

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Reliability Express Control of the Gate Dielectric of Semiconductor Devices by V. A. Solodukha, G. G. Chigir, V. A. Pilipenko, V. A. Filipenya, V. A. Gorushko

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Thermal Load Influence during the Formation of Al-Al Contacts on the Electrical Parameters of the Integrated Circuits with Aluminum-Polysilicon Contacts by V. A. Pilipenko, V. A. Solodukha, N. S. Kovalchuk, J. A. Solovjov, D. V. Shestovski, D. V. Zhyhulin

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Research of Electrophysical Properties of Thin Gate Dielectrics Obtained by Rapid Thermal Processing Method by N. S. Kovalchuk, A. A. Omelchenko, V. A. Pilipenko, V. A. Solodukha, S. V. Demidovich, V. V. Kolos, V. A. Filipenia, D. V. Shestovski

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