Correction: Hsieh et al. Single-Grain Gate-All-Around Si Nanowire FET Using Low-Thermal-Budget Processes for Monolithic Three-Dimensional Integrated Circuits. <i>Micromachines</i>... by Tung-Ying Hsieh, Ping-Yi Hsieh, Chih-Chao Yang, Chang-Hong Shen, Jia-Min Shieh, Wen-Kuan Yeh, Meng-Chyi Wu

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