Showing 1 - 3 results of 3 for search 'TAN Canjian', query time: 0.01s Refine Results
  1. 1
    Development of the 4 500 V IGBT Device with Low On-state Loss and Wide Safe Operation Area

    Development of the 4 500 V IGBT Device with Low On-state Loss and Wide Safe Operation Area by ZHANG Dahua, MA Liang, ZHANG Zhonghua, TAN Canjian, LIU Guoyou

    Published 2017-01-01
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  2. 2
    Research on the Key Technology of Trench Gate IGBT

    Research on the Key Technology of Trench Gate IGBT by HUANG Jianwei, YANG Xinzhu, LIU Gen, LUO Haihui, YU Wei, TAN Canjian

    Published 2015-01-01
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  3. 3
    Effect of P-well Interconnection in Dummy Trench Area on Properties of Trench IGBT

    Effect of P-well Interconnection in Dummy Trench Area on Properties of Trench IGBT by LUO Haihui, XIAO Qiang, YU Wei, YANG Xinzhu, TAN Canjian, HUANG Jianwei, LIU Guoyou

    Published 2016-01-01
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