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Development of the 4 500 V IGBT Device with Low On-state Loss and Wide Safe Operation Area by ZHANG Dahua, MA Liang, ZHANG Zhonghua, TAN Canjian, LIU Guoyou
Published 2017-01-01Get full text
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Research on the Key Technology of Trench Gate IGBT by HUANG Jianwei, YANG Xinzhu, LIU Gen, LUO Haihui, YU Wei, TAN Canjian
Published 2015-01-01Get full text
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