Performance Enhanced by Inserting an InGaN/GaN Shallower-Quantum Well Layer in InGaN Based Green Laser Diodes by Jing Yang, Degang Zhao, Desheng Jiang, Ping Chen, Jianjun Zhu, Zongshun Liu, Xiang Li, Feng Liang, Wei Liu, Shuangtao Liu, Liqun Zhang, Hui Yang, Jian Zhang, Mo Li

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