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    Ultra-low reverse leakage NiOx/β-Ga2O3 heterojunction diode achieving breakdown voltage >3 kV with plasma etch field-termination

    Ultra-low reverse leakage NiOx/β-Ga2O3 heterojunction diode achieving breakdown voltage >3 kV with plasma etch field-termination by Yizheng Liu, Saurav Roy, Carl Peterson, Arkka Bhattacharyya, Sriram Krishnamoorthy

    Published 2025-01-01
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