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    Enhanced ferroelectric performance in Hf0.5Zr0.5O2 capacitors using ultra-thin MoS2 layer for clamping effect and oxygen vacancy suppression

    Enhanced ferroelectric performance in Hf0.5Zr0.5O2 capacitors using ultra-thin MoS2 layer for clamping effect and oxygen vacancy suppression by Soyeon Lee, Hyun Woo Jeong, Jun-Cheol Park, Donghyeon Lee, Yong-Ryun Jo, Jiwoong Yang, Min Hyuk Park, Sanghan Lee

    Published 2025-06-01
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