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    Study of Interface Charge Densities for ZrO2 and HfO2 Based Metal-Oxide-Semiconductor Devices

    Study of Interface Charge Densities for ZrO2 and HfO2 Based Metal-Oxide-Semiconductor Devices by N. P. Maity, Reshmi Maity, R. K. Thapa, S. Baishya

    Published 2014-01-01
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