Showing 1 - 4 results of 4 for search 'Qingchun Zhang', query time: 0.01s Refine Results
  1. 1
    Experiment and Analysis of Termination Robustness Design for 1200 V 4H-SiC MOSFET

    Experiment and Analysis of Termination Robustness Design for 1200 V 4H-SiC MOSFET by Mengyuan Yu, Yi Shen, Hongping Ma, Qingchun Zhang

    Published 2025-05-01
    Get full text
    Article
    Save to List
    Saved in:
  2. 2
    Reduction of Interface State Density in 4H-SiC MOS Capacitors Modified by ALD-Deposited Interlayers

    Reduction of Interface State Density in 4H-SiC MOS Capacitors Modified by ALD-Deposited Interlayers by Zhenyu Wang, Zhaopeng Bai, Yunduo Guo, Chengxi Ding, Qimin Huang, Lin Gu, Yi Shen, Qingchun Zhang, Hongping Ma

    Published 2025-04-01
    Get full text
    Article
    Save to List
    Saved in:
  3. 3
    High-Breakdown and Low-Leakage 4H-SiC MOS Capacitor Based on HfO<sub>2</sub>/SiO<sub>2</sub> Stacked Gate Dielectric in Trench Structures

    High-Breakdown and Low-Leakage 4H-SiC MOS Capacitor Based on HfO<sub>2</sub>/SiO<sub>2</sub> Stacked Gate Dielectric in Trench Structures by Qimin Huang, Yunduo Guo, Anfeng Wang, Lin Gu, Zhenyu Wang, Chengxi Ding, Yi Shen, Hongping Ma, Qingchun Zhang

    Published 2025-02-01
    Get full text
    Article
    Save to List
    Saved in:
  4. 4
    The Trapping Mechanism at the AlGaN/GaN Interface and the Turn-On Characteristics of the p-GaN Direct-Coupled FET Logic Inverters

    The Trapping Mechanism at the AlGaN/GaN Interface and the Turn-On Characteristics of the p-GaN Direct-Coupled FET Logic Inverters by Junfeng Yu, Jihong Ding, Tao Wang, Yukai Huang, Wenzhang Du, Jiao Liang, Hongping Ma, Qingchun Zhang, Liang Li, Wei Huang, Wei Zhang

    Published 2024-12-01
    Get full text
    Article
    Save to List
    Saved in:

Search Tools: