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    Mechanism of novel defect multiplication impacting high power 4H-SiC devices

    Mechanism of novel defect multiplication impacting high power 4H-SiC devices by N.A. Mahadik, M. Dudley, B. Raghothamachar, Z. Chen, R.E. Stahlbush, M. Hinojosa, A. Lelis, W. Sung

    Published 2024-12-01
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