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    Analyzing the Impact of Gate Oxide Screening on Interface Trap Density in SiC Power MOSFETs Using a Novel Temperature-Triggered Method

    Analyzing the Impact of Gate Oxide Screening on Interface Trap Density in SiC Power MOSFETs Using a Novel Temperature-Triggered Method by Monikuntala Bhattacharya, Michael Jin, Hengyu Yu, Shiva Houshmand, Jiashu Qian, Marvin H. White, Atsushi Shimbori, Anant K. Agarwal

    Published 2025-03-01
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