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  1. 1
    Generalized Method to Extract Carrier Diffusion Length from Photoconductivity Transients: Cases of BiVO_{4}, Halide Perovskites, and Amorphous and Crystalline Silicon

    Generalized Method to Extract Carrier Diffusion Length from Photoconductivity Transients: Cases of BiVO_{4}, Halide Perovskites, and Amorphous and Crystalline Silicon by Markus Schleuning, Moritz Kölbach, Fatwa F. Abdi, Klaus Schwarzburg, Martin Stolterfoht, Rainer Eichberger, Roel van de Krol, Dennis Friedrich, Hannes Hempel

    Published 2022-09-01
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  2. 2
    Estimating the quasi-Fermi level of holes at the surface of semiconductor photoanodes using outer-sphere redox couples

    Estimating the quasi-Fermi level of holes at the surface of semiconductor photoanodes using outer-sphere redox couples by Yuu Shioiri, Keisuke Obata, Yudai Kawase, Tomohiro Higashi, Masao Katayama, Markus Schleuning, Roel van de Krol, Dennis Friedrich, Fatwa Firdaus Abdi, Kazuhiro Takanabe

    Published 2025-04-01
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