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    Influence of Substrate connection on dynamic-RON drift of 650 V packaged GaN HEMTs

    Influence of Substrate connection on dynamic-RON drift of 650 V packaged GaN HEMTs by M. Cioni, G. Giorgino, G. Cappellini, A. Chini, C. Miccoli, M.E. Castagna, A. Abbisogni, A. Contarino, F.A. Pizzardi, S. Smerzi, F. Iucolano

    Published 2025-03-01
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