Thermal annealing of clusters and point defects in n-Si (Cz) irradiated by fast-pile neutrons by A. P. Dolgolenko, M. D. Varentsov, G. P. Gaidar, P. G. Litovchenko

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Dependence of the defect introduction rate on irradiation dose of p-Si by fast-pile neutrons by A. P. Dolgolenko, M. D. Varentsov, G. P. Gaidar, P. G. Litovchenko

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Radiation hardness of silicon doped by germanium with high concentration of free oxygen by M. D. Varentsov, G. P. Gaidar, A. P. Dolgolenko, P. G. Litovchenko

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Possibilities of increase of radiation firmness of semiconductor materials by P. G. Litovchenko, L. I. Barabash, S. V. Berdnichenko, D. Bizello, M. D. Varentsov, V. I. Varnina, A. A.Groza, O. P. Dolgolenko, A. Ya. Karpenko, T. I. Kibkalo, V. F. Lastovetsky, A. P. Litovchenko, V. N. Pidtynnykh, L. A. Polivtsev, S. B. Smirnov, M. I. Starchik

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