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1
Key Techniques of SiC MOSFET Chip Design and its Development Trend by GAO Yunbin, LI Chengzhan, JIANG Huaping
Published 2017-01-01Get full text
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2
Development of 1 700 V/1 600 A High Performance SiC Hybrid IGBT Power Module by ZHENG Changwei, CHANG Guiqin, LI Chengzhan
Published 2015-01-01Get full text
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3
Optimum Analytical Model for the Drift Region of Silicon Carbide Uni-polar Power Device by JIANG Huaping, LI Chengzhan, WU Yudong
Published 2015-01-01Get full text
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Development of High Performance SiC Hybird Power Module by SHAO Yun, SHI Jingjing, LI Chengzhan, PENG Yongdian
Published 2013-01-01Get full text
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6
Characteristics of SiC Device and its Application in Railway Traction by LIU kean, LI Chengzhan, LI Yangyong, LI Hua
Published 2016-01-01Get full text
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7
1 200 V Hybrid SiC Power Module with Low Stray Inductance by LI Chengzhan, CHANG Guiqin, PENG Yongdian, FANG Jie, ZHOU Wangjun
Published 2016-01-01Get full text
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8
Influence and reinforcement of gate bias on total dose effect of SiC MOSFET by QIU Leshan, WU Zhikang, CHEN Yan, LI Chengzhan, BAI Yun
Published 2023-09-01Get full text
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Nitridation Process Optimization of 4H-SiC Gate Oxidation by CHEN Ximing, LI Chengzhan, ZHAO Yanli, DENG Xiaochuan, ZHANG Bo
Published 2016-01-01Get full text
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