Fully Transparent Epitaxial Oxide Thin‐Film Transistor Fabricated at Back‐End‐of‐Line Temperature by Suboxide Molecular‐Beam Epitaxy by Felix V.E. Hensling, Patrick Vogt, Jisung Park, Shun‐Li Shang, Huacheng Ye, Yu‐Mi Wu, Kathleen Smith, Veronica Show, Kathy Azizie, Hanjong Paik, Debdeep Jena, Huili G. Xing, Y. Eren Suyolcu, Peter A. van Aken, Suman Datta, Zi‐Kui Liu, Darrell G. Schlom

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Achieving 0.05 Ω-mm contact resistance in non-alloyed Ti/Au ohmics to β-Ga2O3 by removing surface carbon by Naomi Pieczulewski, Kathleen T. Smith, Corey M. Efaw, Arjan Singh, Cameron A. Gorsak, Joshua T. Buontempo, Jesse Wensel, Kathy Azizie, Katie Gann, Michael O. Thompson, Darrell G. Schlom, Farhan Rana, Hari P. Nair, Steven M. Hues, Elton Graugnard, Paul H. Davis, Debdeep Jena, Huili Grace Xing, David A. Muller

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