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Key Techniques of SiC MOSFET Chip Design and its Development Trend by GAO Yunbin, LI Chengzhan, JIANG Huaping
Published 2017-01-01Get full text
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Optimum Analytical Model for the Drift Region of Silicon Carbide Uni-polar Power Device by JIANG Huaping, LI Chengzhan, WU Yudong
Published 2015-01-01Get full text
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