Electrically active defects in Ta-doped β-Ga2O3 grown using the optical floating zone method by Christopher A. Dawe, Lijie Sun, Ananthu Vijayan V. L., Vladimir P. Markevich, Janet Jacobs, Ian D. Hawkins, Matthew P. Halsall, Anthony R. Peaker, David J. Binks, Sai Charan Vanjari, Moorthy Babu Sridharan, Martin Kuball

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