Experiment and Analysis of Termination Robustness Design for 1200 V 4H-SiC MOSFET by Mengyuan Yu, Yi Shen, Hongping Ma, Qingchun Zhang

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Local Streamline Pattern and Topological Index of an Isotropic Point in a 2D Velocity Field by Jian Gao, Rong Wang, Hongping Ma, Wennan Zou

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Reduction of Interface State Density in 4H-SiC MOS Capacitors Modified by ALD-Deposited Interlayers by Zhenyu Wang, Zhaopeng Bai, Yunduo Guo, Chengxi Ding, Qimin Huang, Lin Gu, Yi Shen, Qingchun Zhang, Hongping Ma

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High-Breakdown and Low-Leakage 4H-SiC MOS Capacitor Based on HfO₂/SiO₂ Stacked Gate Dielectric in Trench Structures by Qimin Huang, Yunduo Guo, Anfeng Wang, Lin Gu, Zhenyu Wang, Chengxi Ding, Yi Shen, Hongping Ma, Qingchun Zhang

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The Trapping Mechanism at the AlGaN/GaN Interface and the Turn-On Characteristics of the p-GaN Direct-Coupled FET Logic Inverters by Junfeng Yu, Jihong Ding, Tao Wang, Yukai Huang, Wenzhang Du, Jiao Liang, Hongping Ma, Qingchun Zhang, Liang Li, Wei Huang, Wei Zhang

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High-efficiency upconversion luminescence and enhanced sensitivity temperature sensing behavior in Ho3+/Yb3+ doped yttrium Oxysulfide phosphors by Juan Wang, Renguang Ye, Youjie Hua, Xuejiao Wang, Tianzhi Jiang, Caixia Song, Luping Lyu, Junhao Wu, Hongping Ma, Chenxia Li, Degang Deng, Shiqing Xu

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