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Interfacial Reaction Boosts Thermal Conductance of Room‐Temperature Integrated Semiconductor Interfaces Stable up to 1100 °C by Xiaoyang Ji, Zifeng Huang, Yutaka Ohno, Koji Inoue, Yasusyohi Nagai, Yoshiki Sakaida, Hiroki Uratani, Jinchi Sun, Naoteru Shigekawa, Jianbo Liang, Zhe Cheng
Published 2025-04-01Get full text
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