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  1. 1
    Theory of optical spin-polarization of axial divacancy and nitrogen-vacancy defects in 4H-SiC

    Theory of optical spin-polarization of axial divacancy and nitrogen-vacancy defects in 4H-SiC by Guodong Bian, Gergő Thiering, Ádám Gali

    Published 2025-03-01
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  2. 2
    Single V2 defect in 4H silicon carbide Schottky diode at low temperature

    Single V2 defect in 4H silicon carbide Schottky diode at low temperature by Timo Steidl, Pierre Kuna, Erik Hesselmeier-Hüttmann, Di Liu, Rainer Stöhr, Wolfgang Knolle, Misagh Ghezellou, Jawad Ul-Hassan, Maximilian Schober, Michel Bockstedte, Guodong Bian, Adam Gali, Vadim Vorobyov, Jörg Wrachtrup

    Published 2025-05-01
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