Random telegraph noise-based analysis of electron traps of sub-30-nm DRAM cell-array transistors in cryogenic operation by Sangwon Lee, Ho Jung Lee, Ga Won Yang, Sungju Choi, Jingyu Park, Seonhaeng Lee, Gang-Jun Kim, Namhyun Lee, Yoon Kim, Myounggon Kang, Rock-Hyun Baek, Changhyun Kim, Ickhyun Song, Dae Hwan Kim

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