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    Topological Hall Effect in Single Thick SrRuO3 Layers Induced by Defect Engineering

    Topological Hall Effect in Single Thick SrRuO3 Layers Induced by Defect Engineering by Changan Wang, Ching‐Hao Chang, Andreas Herklotz, Chao Chen, Fabian Ganss, Ulrich Kentsch, Deyang Chen, Xingsen Gao, Yu‐Jia Zeng, Olav Hellwig, Manfred Helm, Sibylle Gemming, Ying‐Hao Chu, Shengqiang Zhou

    Published 2020-06-01
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