Experimental Evaluation of the Average Energy for Impact Ionization by Holes in Al0.4Ga 0.6N Alloy by Haifeng Chen, Yiren Chen, Hang Song, Zhiming Li, Hong Jiang, Dabing Li, Guoqing Miao, Xiaojuan Sun, Zhiwei Zhang

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NIR‐I Activated Orthogonal NIR‐IIb/c Emissions in a Lanthanide‐Doped Nanoparticle for Fluorescence Imaging and Information Encryption by Qiqing Li, Yuanping Huang, Haoyu Zhu, Yaqi Zhu, Yuexi Yi, Xiaodan Li, Haoran Chen, Bin Li, Dabing Li, Yulei Chang

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Design and Optimization for AlGaN‐Based Deep Ultraviolet Fabry–Perot Laser Diodes by Jianyu Yang, Kangkai Tian, Chunshuang Chu, Yonghui Zhang, Ke Jiang, Xiaojuan Sun, Dabing Li, Xiao Wei Sun, Zi‐Hui Zhang

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Physical Model Development for Fabricating MIS‐Anode‐Based 1100 V AlGaN/GaN‐Based Lateral Schottky Barrier Diodes Grown on Silicon Substrate with Low Leakage Current by Jingting He, Zhizhong Wang, Fuping Huang, Chunshuang Chu, Kangkai Tian, Shuting Cai, Yonghui Zhang, Xiaojuan Sun, Dabing Li, Xiaowei Sun, Zi‐Hui Zhang

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Phase-pure ferroelectric quantum wells with tunable photoluminescence for multi-state optoelectronic applications by Rui Sun, Yuping Jia, Bo Lai, Zhiming Shi, Mingrui Liu, Weili Yu, Ke Jiang, Shanli Zhang, Shunpeng Lv, Yang Chen, Xiaojuan Sun, Dabing Li

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Uncooled near- to long-wave-infrared polarization-sensitive photodetectors based on MoSe2/PdSe2 van der Waals heterostructures by Mingxiu Liu, Liujian Qi, Yuting Zou, Nan Zhang, Feng Zhang, Huaiyu Xiang, Zhilin Liu, Mingyan Qin, Xiaojuan Sun, Yuquan Zheng, Chao Lin, Dabing Li, Shaojuan Li

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Wafer‐Scale Growth and Transfer of High‐Quality MoS2 Array by Interface Design for High‐Stability Flexible Photosensitive Device by Bingchen Lü, Yang Chen, Xiaobao Ma, Zhiming Shi, Shanli Zhang, Yuping Jia, Yahui Li, Yuang Cheng, Ke Jiang, Wenwen Li, Wei Zhang, Yuanyuan Yue, Shaojuan Li, Xiaojuan Sun, Dabing Li

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