Energy-Dispersive X-Ray Microanalysis – as a Method for Study the Aluminium-Polysilicon Interface after Exposure with Long-Term and Rapid Thermal Annealing by U. A. Pilipenko, N. S. Kovalchuk, D. V. Shestovski, D. V. Zhyhulin

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Structure of Silicon Wafers Planar Surface before and after Rapid Thermal Treatment by U. A. Pilipenko, A. A. Sergeichik, D. V. Shestovski, V. A. Solodukha

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Spectral Ellipsometry as a Method of Investigation of Influence of Rapid Thermal Processing of Silicon Wafers on their Optical Characteristics by V. A. Solodukha, U. A. Pilipenko, A. A. Omelchenko, D. V. Shestovski

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Formation of a gate dielectric of nanometer thickness by rapid thermal treatment by N. S. Kovalchuk, A. A. Omelchenko, V. A. Pilipenko, V. A. Solodukha, D. V. Shestovski

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The Influence of Rapid Heat Treatment During the Formation of Aluminum-Polysilicon Contacts on the Electrical Parameters of CMOS Microcircuits by V. A. Pilipenko, N. S. Kovalchuk, Ja. A. Solovjov, D. V. Shestovski, D. V. Zhyhulin

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Thermal Load Influence during the Formation of Al-Al Contacts on the Electrical Parameters of the Integrated Circuits with Aluminum-Polysilicon Contacts by V. A. Pilipenko, V. A. Solodukha, N. S. Kovalchuk, J. A. Solovjov, D. V. Shestovski, D. V. Zhyhulin

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Research of Electrophysical Properties of Thin Gate Dielectrics Obtained by Rapid Thermal Processing Method by N. S. Kovalchuk, A. A. Omelchenko, V. A. Pilipenko, V. A. Solodukha, S. V. Demidovich, V. V. Kolos, V. A. Filipenia, D. V. Shestovski

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