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    Detection of defects with carbon–carbon single-bonds in near-surface region of SiC induced by low-oxygen-partial-pressure annealing by using FTIR

    Detection of defects with carbon–carbon single-bonds in near-surface region of SiC induced by low-oxygen-partial-pressure annealing by using FTIR by Chuyang Lyu, Takashi Onaya, Koji Kita

    Published 2025-01-01
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